In a pivotal move to ramp up its 3D NAND production, Samsung Electronics, a key player across the electronics & media industry is expected to develop Xian Line 2 to fulfill the rising demand for 3D NAND flashes. With the excess production in the country, the manufacturer of the consumer electronics goods plans to enhance its position across China semiconductor market.

The firm is anticipated to invest nearly USD 7 billion for three years in the Xian Line 2 project, which is expected to be completed next year. For the record, in the third quarter of 2017, Samsung Electronics entered into an MoU agreement with Shanxi province administration for investing in the Xian Line 2 venture.

Kim Ki-nam, the President of Samsung Electronics, has stated that the firm will continue to significantly contribute towards the global semiconductor industry. The company would be offering unique solutions to its consumers through the manufacture of excellent memory semiconductor products via future business operations taking place in the second line of Xian, he says. It is being speculated that through this move, Samsung has targeted China electronics & media industry that has an escalating demand for NAND flashes.

Samsung’s Xian Line 2 unit will manufacture nearly 1,20,000 wafers of NAND flashes per month, thereby topping 20% of the firm’s overall production of the flashes estimated to be in the range of 4,60,000 and 4,90,000 units each month. With the government of China promoting the semiconductor sector, Samsung faces an uphill task of maintaining its edge over the competitors in the Chinese NAND market.

The new initiative for constructing a unit at Xian Line 2 depicts Samsung’s business objective of selling more high-performing 3D NAND flashes across the China semiconductor market. Authentic sources state that the electronics and media industry player is producing 64-layered 3D NAND flashes and is likely to manufacture 96-layered 3D NAND flashes this year.